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?2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
Electrical Speci?cations
TC
= 25
oC, Unless Otherwise Speci?ed
SYMBOL TEST CONDITION
RHRP840 RHRP860
UNITS
MIN TYP MAX MIN TYP MAX
VF
IF
= 8A - - 2.1 - - 2.1 V
IF
= 8A, T
C
= 150
oC - - 1.7 - - 1.7 V
IR
VR
= 400V - - 100 - - -
μA
VR
= 600V
-----100μA
VR
= 400V, T
C
= 150
oC - - 500 - - -μA
VR
= 600V, T
C
= 150
oC -----500μA
trrIF
= 1A, dI
F/dt = 200A/μs - -30- -30ns
IF
= 8A, dI
F/dt = 200A/μs - -35- -35ns
ta
IF
= 8A, dI
F/dt = 200A/μs - 18 - - 18 - ns
tb
IF
= 8A, dI
F/dt = 200A/μs - 10 - - 10 - ns
QRR
IF
= 8A, dI
F/dt = 200A/μs - 56 - - 56 - nC
CJ
VR
= 10V, I
F
= 0A -25- -25- pF
RθJC
--2--2oC/W
DEFINITIONS
VF
= Instantaneous forward voltage (pw = 300
μs, D = 2%).
IR
= Instantaneous reverse current.
trr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b.
ta
= Time to reach peak reverse current (See Figure 9).
tb
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
QRR
= Reverse recovery charge.
CJ = Junction capacitance.
RθJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
1
40
0.5
0
10
0.5
1
1.5
2 2.5
3
175oC
25oC
100oC
VR, REVERSE VOLTAGE (V)
0 200 400 600100
300 500
1000
0.01
0.1
1
10
I
R
, REVERSE CURRENT (
μ
A)
100
175oC
100oC
25oC
RHRP840, RHRP860
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